unisonic technologies co., ltd BSS84Z preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-719.b 0.13a, 50v p-ch a nnel enhancement mode field effect transistor ? description these p-channel enhancement mode field vertical d-mos transistors are in a sot-23- 3 smd package, and in most applications they require up to 0.13a dc and can deliver current up to 0.52a. this product is particularly suited to low voltage applications requiring a low current high side switch. ? features * r ds(on) =10 ? @ v gs =-5v ? symbol 2.drain 3.source 1.gate ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 BSS84Zl-ae2-r BSS84Zg-ae2-r sot-23-3 s g d tape reel note: pin assignment: g: gate d: drain s: source ? marking
BSS84Z preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-719.b ? absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -50 v gate-source voltage v gss 20 v continuous drain current dc i d -0.13 a pulse -0.52 power dissipation p d 0.36 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: a bsolute maximum ratings are those values beyo nd which the device could be permanently damaged. a bsolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 350 /w ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -50 v zero gate voltage drain current i dss v ds =-50v, v gs =0v -15 a gate?body leakage, forward i gss v ds =0v, v gs =20v 10 a on characteristics (note) gate-threshold voltage v gs ( th ) v ds =v gs , i d =-1m a -0.8 -1.7 -2 v static drain?source on?resistance r ds(on) v gs =-5v, i d =-0.1a 1.2 10 ? v gs =-55 v, i d =-0.1a, t j =125 1.9 17 on-state drain current i d ( on ) v gs =-10 v, v ds =-5v -0.6 a forward transconductance g fs v ds =-25v, i d =-0.1a 0.05 0.6 s dynamic parameters input capacitance c iss v ds =-25v, v gs =0v, f=1mhz 73 pf output capacitance c oss 10 pf reverse transfer capacitance c rss 5 pf switching parameters (note) total gate charge q g v ds =-30v, v gs =-10v, i d =-0.1a 0.9 1.3 nc gate source charge q gs 0.2 nc gate drain charge q gd 0.3 nc turn-on delay time t d ( on ) v dd =-30v, i d =-0.1a,v gs =-10v, r g =6 ? , 2.5 5 ns turn-on rise time t r 6.3 13 ns turn-off delay time t d ( off ) 10 20 ns turn-off fall-time t f 4.8 9.6 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0v, i s =-0.26a (note) -0.8 -1.2 v max. diode forward current i s -0.13 a note: pulse test, pulse width 300us, duty cycle 2%
BSS84Z preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-719.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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